Laminated element manufacturing method

ABSTRACT

A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

TECHNICAL FIELD

The present disclosure relates to a laminated element manufacturingmethod.

BACKGROUND ART

Patent Literature 1 discloses a method of cutting a semiconductor wafer.In the method, the street of the semiconductor wafer is cut in a mannerthat a cutting blade that rotates at high speed is lowered while a chucktable is caused to reciprocate, in a state where the semiconductor waferis attracted and held on the chuck table. The semiconductor wafer isdiced by performing the above cutting on all streets, and thus isdivided into individual semiconductor chips.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Unexamined Patent Publication No.2006-013312

SUMMARY OF INVENTION Technical Problem

Currently, for example, in a field of a semiconductor memory such as adynamic random access memory (DRAM), development of a laminated elementconfigured by laminating a plurality of elements proceeds, and boththinning of the laminated element and improvement of yield are expectedto be realized.

Thus, an object of the present disclosure is to provide a laminatedelement manufacturing method in which it is possible to achieve boththinning of a laminated element and improvement of yield.

Solution to Problem

According to an aspect of the present disclosure, a laminated elementmanufacturing method includes a first forming step of preparing a firstwafer as a semiconductor wafer including a semiconductor substratehaving a front surface and a back surface, and a circuit layer includinga plurality of functional elements two-dimensionally arranged along thefront surface, and forming a first modified region along a line to cutby irradiating the semiconductor substrate of the first wafer with alaser light along the line to cut set to pass between each of thefunctional elements, a first grinding step of grinding the semiconductorsubstrate of the first wafer after the first forming step, a bondingstep of preparing a second wafer as the semiconductor wafer and bondingthe circuit layer of the second wafer to the semiconductor substrate ofthe first wafer such that each of the functional elements of the firstwafer correspond to each of the functional elements of the second wafer,after the first grinding step, a second forming step of forming a secondmodified region along the line to cut by irradiating the semiconductorsubstrate of the second wafer with a laser light along the line to cut,after the bonding step, and a second grinding step of grinding thesemiconductor substrate of the second wafer after the second formingstep.

In the laminated element manufacturing method, since a flow of grindingthe semiconductor substrate of the first wafer, bonding the circuitlayer of the second wafer to the semiconductor substrate of the firstwafer, and grinding the semiconductor substrate of the second wafer isrepeated, it is possible to obtain a laminated body in which a pluralityof semiconductor wafers are laminated, in a state where eachsemiconductor substrate is thinned. In addition, since the modifiedregion is formed in each semiconductor substrate before thesemiconductor substrate is ground, it is possible to obtain a laminatedbody in which the modified region is formed in each semiconductorsubstrate. Here, if blade dicing is used for cutting the laminated bodyas described above, the yield is significantly reduced by chipping at abonding interface of the semiconductor wafer. On the contrary, in thelaminated element manufacturing method, since the fracture extends fromthe modified region formed in each semiconductor substrate, it ispossible to cut the laminated body while suppressing an occurrence ofchipping at the bonding interface of the semiconductor wafer. Thus,according to the laminated element manufacturing method, it is possibleto achieve both thinning of the laminated element and improvement of theyield.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the first forming step, a firstfracture extending from the first modified region toward the circuitlayer of the first wafer may be formed. According to this configuration,it is possible to easily cut the laminated body along the line to cutwith high accuracy.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the first grinding step, the firstmodified region may be removed, and the first fracture may be exposed tothe back surface of the semiconductor substrate of the first wafer.According to this configuration, since the first modified region doesnot remain on a cut surface of the manufactured laminated element, it ispossible to suppress degradation of flexural strength of the laminatedelement.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the second forming step, a secondfracture extending from the second modified region toward the circuitlayer of the second wafer may be formed. According to thisconfiguration, it is possible to easily cut the laminated body along theline to cut with high accuracy.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the second forming step, the secondfracture may be formed to reach an interface between the semiconductorsubstrate of the first wafer and the circuit layer of the second wafer.According to this configuration, it is possible to more easily cut thelaminated body along the line to cut with higher accuracy.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the second grinding step, the secondmodified region may be removed, and the second fracture may be exposedto the back surface of the semiconductor substrate of the second wafer.According to this configuration, since the second modified region doesnot remain on the cut surface of the manufactured laminated element, itis possible to suppress degradation of flexural strength of thelaminated element.

According to another aspect of the present disclosure, a laminatedelement manufacturing method includes a first grinding step of preparinga first wafer as a semiconductor wafer including a semiconductorsubstrate having a front surface and a back surface, and a circuit layerincluding a plurality of functional elements two-dimensionally arrangedalong the front surface, and grinding the semiconductor substrate of thefirst wafer, a bonding step of preparing a second wafer as thesemiconductor wafer and bonding the circuit layer of the second wafer tothe semiconductor substrate of the first wafer such that each of thefunctional elements of the first wafer correspond to each of thefunctional elements of the second wafer, after the first grinding step,a forming step of forming a modified region along a line to cut byirradiating a semiconductor substrate of the second wafer with a laserlight along the line to cut set to pass between each of the functionalelements, after the bonding step, and a second grinding step of grindingthe semiconductor substrate of the second wafer after the forming step.

In the laminated element manufacturing method, since a flow of grindingthe semiconductor substrate of the first wafer, bonding the circuitlayer of the second wafer to the semiconductor substrate of the firstwafer, and grinding the semiconductor substrate of the second wafer isrepeated, it is possible to obtain a laminated body in which a pluralityof semiconductor wafers are laminated, in a state where eachsemiconductor substrate is thinned. In addition, since the modifiedregion is formed in one semiconductor substrate among a plurality ofsemiconductor substrates before the semiconductor substrates are ground,it is possible to obtain a laminated body in which the modified regionis formed in at least one semiconductor substrate. Here, if blade dicingis used for cutting the laminated body as described above, the yield issignificantly reduced by chipping at a bonding interface of thesemiconductor wafer. On the contrary, in the laminated elementmanufacturing method, since the fracture extends from the modifiedregion formed in at least one semiconductor substrate, it is possible tocut the laminated body while suppressing an occurrence of chipping atthe bonding interface of the semiconductor wafer. Thus, according to thelaminated element manufacturing method, it is possible to achieve boththinning of the laminated element and improvement of the yield.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the forming step, a fracture extendingfrom the modified region toward the circuit layer of the second wafermay be formed. According to this configuration, it is possible to easilycut the laminated body along the line to cut with high accuracy.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the forming step, the fracture may beformed to reach an interface between the circuit layer of the firstwafer and the semiconductor substrate of the first wafer. According tothis configuration, it is possible to more easily cut the laminated bodyalong the line to cut with higher accuracy.

According to the aspect of the present disclosure, in the laminatedelement manufacturing method, in the second grinding step, the modifiedregion may be removed, and the fracture may be exposed to the backsurface of the semiconductor substrate of the second wafer. According tothis configuration, since the modified region does not remain on the cutsurface of the manufactured laminated element, it is possible tosuppress degradation of flexural strength of the laminated element.

According to the aspect of the present disclosure, the laminated elementmanufacturing method may further include a pick-up step of picking up aplurality of laminated elements obtained by cutting the first wafer andthe second wafer along the line to cut, after the second grinding step.According to this configuration, it is possible to obtain a laminatedelement with high efficiency.

Advantageous Effects of Invention

According to the present disclosure, it is possible to provide alaminated element manufacturing method in which it is possible toachieve both thinning of a laminated element and improvement of yield.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic configuration diagram illustrating a laserprocessing device used for forming a modified region.

FIG. 2 is a plan view illustrating a processing target as a target offorming the modified region.

FIG. 3 is a sectional view of the processing target taken along lineIII-III in FIG. 2.

FIG. 4 is a plan view illustrating the processing target after laserprocessing.

FIG. 5 is a sectional view of the processing target taken along line V-Vin FIG. 4.

FIG. 6 is a sectional view of the processing target taken along lineVI-VI in FIG. 4.

FIG. 7 is a plan view illustrating a laminated body as the processingtarget.

FIG. 8 is a schematic plan view illustrating an enlarged portion of thelaminated body illustrated in FIG. 7.

FIG. 9 is a schematic sectional view taken along line IX-IX in FIG. 8.

FIG. 10 is an enlarged view illustrating a partial region illustrated inFIG. 9.

FIG. 11 is a diagram illustrating a main step of a laminated elementmanufacturing method according to a first embodiment.

FIG. 12 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the first embodiment.

FIG. 13 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the first embodiment.

FIG. 14 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the first embodiment.

FIG. 15 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the first embodiment FIG. 16 is adiagram illustrating the main step of the laminated elementmanufacturing method according to the first embodiment.

FIG. 17 is a diagram illustrating a main step of a laminated elementmanufacturing method according to a second embodiment.

FIG. 18 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the second embodiment.

FIG. 19 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the second embodiment.

FIG. 20 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the second embodiment.

FIG. 21 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the second embodiment.

FIG. 22 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the second embodiment.

FIG. 23 is a diagram illustrating a main step of a laminated elementmanufacturing method according to a third embodiment.

FIG. 24 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the third embodiment.

FIG. 25 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the third embodiment.

FIG. 26 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the third embodiment.

FIG. 27 is a diagram illustrating a main step of a laminated elementmanufacturing method according to a fourth embodiment.

FIG. 28 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the fourth embodiment.

FIG. 29 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the fourth embodiment.

FIG. 30 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the fourth embodiment.

FIG. 31 is a diagram illustrating the main step of the laminated elementmanufacturing method according to the fourth embodiment.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be described indetail with reference to the drawings. In the drawings, the sameelements or the corresponding elements are denoted by the same referencesigns, and repetitive descriptions thereof will be omitted.

[Formation of Modified Region]

According to an embodiment, in a laminated element manufacturing method,a modified region is formed in a processing target along a line to cutby condensing a laser light on the processing target (laminated body ofsemiconductor wafers as an example). Firstly, formation of the modifiedregion will be described with reference to FIGS. 1 to 6.

As illustrated in FIG. 1, a laser processing device 100 includes a laserlight source 101 that pulse-oscillates a laser light L, a dichroicmirror 103 arranged to change the direction of an optical axis (opticalpath) of the laser light L by 90°, and a condensing lens 105 thatcondenses the laser light L. Further, the laser processing device 100includes a support base 107 for supporting a processing target 1irradiated with the laser light L condensed by the condensing lens 105,a stage 111 for moving the support base 107, a laser light sourcecontroller 102 that controls the laser light source 101 in order toadjust an output, a pulse width, a pulse waveform, or the like of thelaser light L, and a stage controller 115 that controls movement of thestage 111.

In the laser processing device 100, regarding the laser light L emittedfrom the laser light source 101, the direction of the optical axis ofthe laser light L is changed by 90° by the dichroic mirror 103, andthen, the laser light L is condensed by the condensing lens 105 in theprocessing target 1 placed on the support base 107. At the same time,the stage 111 is moved, and the processing target 1 is moved relative tothe laser light L along a line to cut 5. Thus, a modified region isformed in the processing target 1 along the line to cut 5. Here, thestage 111 is moved to move the laser light L relatively, but thecondensing lens 105 may be moved, or both thereof may be moved.

As the processing target 1, a plate-like member (for example, asubstrate and a wafer) including a semiconductor substrate made of asemiconductor material, a piezoelectric substrate made of apiezoelectric material, or the like is used. As illustrated in FIG. 2,the line to cut 5 for cutting the processing target 1 is set on theprocessing target 1. The line to cut 5 is a virtual line extending in astraight line. In a case where the modified region is formed in theprocessing target 1, as illustrated in FIG. 3, the laser light L isrelatively moved along the line to cut 5 (that is, in a directionindicated by an arrow A in FIG. 2) in a state where a focusing point(focusing position) P is aligned in the processing target 1 Thus, asillustrated in FIGS. 4 to 6, the modified region 7 is formed in theprocessing target 1 along the line to cut 5, and the modified region 7formed along the line to cut 5 functions as a cutting start region 8.

The focusing point P is a location in which the laser light L iscondensed. The line to cut 5 is not limited to a straight line and maybe a curved line, a three-dimensional combination of the lines, or acoordinate designated. The line to cut 5 is not limited to a virtualline and may be a line actually drawn on the front surface 3 of theprocessing target 1. The modified region 7 may be formed continuously orintermittently. The modified region 7 may be in a form of a row or adot. In short, the modified region 7 may be formed at least in theprocessing target 1. A fracture may be formed at a start point of themodified region 7. The fracture and the modified region 7 may be exposedto the outer surface (front surface 3, back surface, or outercircumferential surface) of the processing target 1. An incident surfaceof the laser light when the modified region 7 is formed is not limitedto the front surface 3 of the processing target 1 and may be the backsurface of the processing target 1.

In a case where the modified region 7 is formed in the processing target1, the laser light L passes through the processing target 1 and isparticularly absorbed in the vicinity of the focusing point P located inthe processing target 1. Thus, the modified region 7 is formed in theprocessing target 1 (that is, internal absorption laser processing). Inthis case, since the laser light L is hardly absorbed by the frontsurface 3 of the processing target 1, the front surface 3 of theprocessing target 1 is not melted. In a case where the modified region 7is formed on the front surface 3 of the processing target 1, the laserlight L is particularly absorbed in the vicinity of the focusing point Plocated on the front surface 3. Thus, melting and removing are performedfrom the front surface 3, and a removal portion such as a hole or agroove is formed (surface absorption laser processing).

The modified region 7 is a region in which the density, refractiveindex, mechanical strength, and other physical characteristics aredifferent from those of the surroundings. Examples of the modifiedregion 7 include a melting treatment region (which means at least anyone of a region which is solidified again after melting once, a regionin a melted state, and a region in a state of being solidified againfrom melting), a crack region, a dielectric breakdown region, and arefractive index change region. In addition, a region in which the aboveregions are mixed is provided. Further, the modified region 7 includes aregion in which, regarding the material of the processing target 1, thedensity in the modified region 7 is changed compared to the density in anon-modified region, or a region in which lattice defects are formed. Ina case where the material of the processing target 1 is single crystalsilicon, the modified region 7 may be referred to as a high dislocationdensity region.

Regarding the melting treatment region, the refractive index changeregion, the region in which the density in the modified region 7 ischanged compared to the density in the non-modified region, and theregion in which lattice defects are formed, a fracture (microcrack) maybe included in these regions or at an interface between the modifiedregion 7 and the non-modified region. The fracture to be included may beformed over the entire surface of the modified region 7 or may be formedonly in a portion or in a plurality of portions. The processing target 1includes a substrate made of a crystal material having a crystalstructure. For example, the processing target 1 includes a substrateformed of at least any one of gallium nitride (GaN), silicon (Si),silicon carbide (SiC), LiTaO₃, and sapphire (Al₂O₃). In other words, forexample, the processing target 1 includes a gallium nitride substrate, asilicon substrate, a SiC substrate, a LiTaO₃ substrate, or a sapphiresubstrate. The crystal material may be either anisotropic crystal orisotropic crystal. The processing target 1 may include a substrate madeof an amorphous material having an amorphous structure, for example, aglass substrate.

In the embodiment, the modified region 7 may be formed by forming aplurality of modified spots (processing marks) along the line to cut 5.In this case, the modified region 7 is formed by collecting theplurality of modified spots. The modified spot is a modified portionformed by one pulse shot (that is, irradiation with one pulse laser:laser shot) of a pulsed laser light. Examples of the modified spotinclude a crack spot, a melting treatment spot, a refractive indexchange spot, or a mixture of at least one thereof. For the modifiedspot, considering the required cutting accuracy, required flatness ofthe cut surface, and the thickness, type, crystal orientation, and thelike of the processing target 1, the size of the processing target 1 orthe length of a fracture to be generated may be appropriatelycontrolled. In the embodiment, the modified spot may be formed as themodified region 7, along the line to cut 5.

First Embodiment

An example of the laminated element manufacturing method according to afirst embodiment will be described. In the manufacturing method, alaminated body in which a plurality of semiconductor wafers arelaminated is obtained. Firstly, an example of the configuration of alaminated body and an example of a laminated element to be manufacturedwill be described.

FIG. 7 is a plan view illustrating a laminated body as the processingtarget. FIG. 8 is a schematic plan view illustrating an enlarged portionof the laminated body illustrated in FIG. 7. FIG. 9 is a schematicsectional view taken along line IX-IX in FIG. 8. As illustrated in FIGS.7 to 9, the laminated body 10 (processing target 1) includes an activeregion 11 and a cutting region 12. Active regions 11 aretwo-dimensionally arranged in a first direction D1 along an orientationflat 6 and a second direction D2 intersecting (orthogonal) with (to) thefirst direction D1. Cutting regions 12 are formed in a lattice shape tosurround the active regions 11 when viewed from a third direction D3intersecting (orthogonal) with (to) the first direction D1 and thesecond direction D2.

The laminated body 10 includes a plurality (here, ten) of semiconductorwafers 20 laminated on each other in the third direction D3. Each of thesemiconductor wafers 20 includes a semiconductor substrate 21 and acircuit layer 22. The semiconductor substrate 21 includes a frontsurface 21 f and a back surface 21 r. The circuit layer 22 is formed onthe front surface 21 f and includes a plurality of functional elements23 two-dimensionally arranged along the front surface 21 f. One activeregion 11 is set across all the semiconductor wafers 20 to include aplurality of (here, ten) functional elements 23 laminated in a line inthe third direction D3. In the manufacturing method, each active region11 is cut out by cutting the laminated body 10 in the cutting region 12.

Therefore, a line to cut 5 a along the first direction D1 and a line tocut 5 b along the second direction D2 are set as the above-describedline to cut 5, in the laminated body 10. The lines to cut 5 a and 5 bare set in the cutting region 12 to pass between the functional elements23 adjacent to each other in the first direction D1 and the seconddirection D2. More specifically, in the cutting region 12, a circularstreet portion 25 is provided in the circuit layer 22 to surround thefunctional element 23, and a lattice-like metal wiring portion 26 isprovided to surround the functional element 23 and the street portion25. The metal wiring portion 26 is, for example, a TEG wiring.

The line to cut 5 a is set in the first direction D1 such that the lineto cut 5 a passes through the metal wiring portion 26 between streetportions 25 which are adjacent to each other in the first direction D1,while passing through the street portion 25 between the functionalelements 23 adjacent to each other in the second direction D2. Further,the line to cut 5 b is set in the second direction D2 such that the lineto cut 5 b passes through the metal wiring portion 26 between streetportions 25 which are adjacent to each other in the second direction D2,while passing through the street portion 25 between the functionalelements 23 adjacent to each other in the first direction D1. Here, inthe circuit layer 22, a metal guard ring 27 is provided between thefunctional element 23 and the street portion 25. In FIG. 8, theillustration of the semiconductor substrate 21 on the surface layer ofthe laminated body 10 is omitted.

Here, the laminated body 10 includes a semiconductor wafer 20A includinga functional element 23 as a semiconductor memory described later, and asemiconductor wafer 20B including a functional element 23 as a driver ICof the semiconductor memory, as the semiconductor wafer 20. Here, thelaminated body 10 has one end 10 a and the other end 10 b in thelamination direction (third direction D3), and only the semiconductorwafer 20 constituting the one end 10 a is the semiconductor wafer 20B.The other semiconductor wafer 20 including the semiconductor wafer 20constituting the other end 10 b is the semiconductor wafer 20A.

Subsequently, the laminated element 15 will be described. The laminatedelement 15 is mainly manufactured in a manner that the active region 11is cut out by cutting the laminated body 10 along the above-describedlines to cut 5 a and 5 b. Therefore, each laminated element 15 includesa plurality of semiconductor substrates 21 and circuit layers 22 (thesame as the number of semiconductor wafers 20 in the laminated body 10)laminated in a line. In the laminated element 15, one circuit layer 22includes one functional element 23.

Therefore, the entirety of the laminated element 15 includes functionalelements 23 of which the number is equal to the number of circuit layers22. The functional elements 23 are electrically connected to each other,for example, through through electrodes (not illustrated) formed in thesemiconductor substrate 21 and the circuit layer 22. The functionalelement 23 includes a functional element for a semiconductor memory suchas a DRAM and a functional element for a driver IC of the semiconductormemory. The through electrode is formed by, for example, athrough-silicon via (TSV) structure. The through electrode is used forsupplying power to the functional element 23 and the like of each layer(for example, the semiconductor memory and the driver IC). The laminatedelement 15 further includes, for example, a circuit (not illustrated)for performing high-speed wireless communication by magnetic fieldtransmission, and signals may be transmitted and received using thecircuit.

(a) of FIG. 10 is an enlarged view illustrating a region A1 in FIG. 9,and is an enlarged sectional view illustrating the circuit layer 22including the functional element 23 for the semiconductor memory and thecorresponding semiconductor substrate 21. (b) of FIG. 10 is an enlargedview illustrating a region A2 in FIG. 9, and is an enlarged sectionalview illustrating the street portion 25 and the correspondingsemiconductor substrate 21. As illustrated in (a) of FIG. 10, thefunctional element 23 includes a plurality of memory cells 22 a. Thememory cell 22 a and a region around the memory cell 22 a are configuredby, for example, an interlayer insulating film such as a SiO₂ film, awiring layer, and the like. First conductive type regions (for example,P-well) 21 a and 21 b expanding from the front surface 21 f towards theback surface 22 r, a second conductive type region (for example, N-well)21 c, and a second conductive type region (for example, Deep N-well) 21d expanding to surround the first conductive type region 21 a are formedat a portion of the semiconductor substrate 21, which corresponds to thefunctional element 23. The first conductive type region 21 a is formedat a position corresponding to the memory cell 22 a. The semiconductorsubstrate 21 is, for example, a silicon substrate.

A gettering region 4 is formed at a portion of the semiconductorsubstrate 21, which corresponds to the functional element 23 (morespecifically, a portion on the back surface 21 r side with respect tothe second conductive type region 21 d among the portions), so as to beexposed to the back surface 21 r. The gettering region 4 exhibits agettering effect of collecting and capturing impurities such as heavymetals in the semiconductor substrate 2. The gettering region 4 is aregion in which the semiconductor substrate 21 is reformed byirradiation with a laser light (region in which the density, refractiveindex, mechanical strength, and other physical characteristics aredifferent from those in the surroundings). For example, the getteringregion 4 is a melting processing region. The gettering region 4 may beformed continuously or intermittently so long as the gettering region 4faces the functional element 23 (more specifically, the memory cell 22a).

As illustrated in (b) of FIG. 10, in the street portion 25, the circuitlayer 22 includes insulating layers 28 and 29 which are sequentiallylaminated on the front surface 21 f of the semiconductor substrate 21.The insulating layer 28 is made of for example, silicon oxide (forexample, SiO₂). The insulating layer 29 is made of, for example, siliconnitride (for example, SiN). A fracture 9 is formed in the cutting region12 along each of the lines to cut 5 a and 5 b. The dimension of thelaminated element 15 in the first direction D1 is, for example, about 10mm. The dimension of the laminated element 15 in the second direction D2is, for example, about 10 mm. The dimension of the laminated element 15in the third direction D3 is, for example, about 300 μm.

An example of the laminated element manufacturing method according tothe first embodiment will be described. Firstly, as illustrated in (a)of FIG. 11, a semiconductor wafer 20B is prepared. The circuit layer 22of the semiconductor wafer 20B includes the functional element 23 as adriver IC. The circuit layer 22 of the semiconductor wafer 20B includesinsulating layers 31 and 32 which are sequentially laminated on thefront surface 21 f in the street portion 25.

The insulating layer 31 is made of, for example, silicon oxide (forexample, SiO₂). The insulating layer 32 is, for example, a Black Diamondtype Low-k film. The thickness of the semiconductor substrate 21 of thesemiconductor wafer 20B is about 600 μm to 800 μm, for example. Thethickness of the circuit layer 22 of the semiconductor wafer 20B is from3 μm to 13 μm, for example.

Then, as illustrated in (b) of FIG. 11, the semiconductor wafer (firstwafer) 20A is prepared. The circuit layer 22 of the semiconductor wafer20A includes the functional element 23 as the semiconductor memory. Thecircuit layer 22 of the semiconductor wafer 20A includes the insulatinglayers 28 and 29 in the street portion 25. The thickness of thesemiconductor substrate 21 of the semiconductor wafer 20A is about 600μm to 800 μm, for example. The thickness of the circuit layer 22 of thesemiconductor wafer 20A is from 3 μm to 13 μm, for example.

Then, the circuit layer 22 of the semiconductor wafer 20A is directlybonded to the circuit layer 22 of the semiconductor wafer 20B. At thistime, the functional elements 23 of the semiconductor wafer 20Bcorrespond to the functional elements 23 of the semiconductor wafer 20Ain the third direction D3 intersecting with the front surface 21 f andthe back surface 21 r, respectively. That is, each of the functionalelements 23 of the semiconductor wafer 20B and each of the functionalelements 23 of the semiconductor wafer 20A are arranged side by side inthe third direction D3 (in other words, facing each other in the thirddirection D3). An example of direct bonding includes room temperaturebonding.

Then, as illustrated in (a) of FIG. 12, the semiconductor substrate 21is irradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20A as an incident surface of the laser lightL1, and thus a modified region (first modified region) 7 is formed alongeach of the lines to cut 5 a and 5 b in the semiconductor substrate 21.In addition, a fracture (first fracture) 9 extending from the modifiedregion 7 toward the circuit layer 22 of the semiconductor wafer 20A isformed in the semiconductor substrate 21 (first forming step). Here, thefracture 9 is formed to reach at least the interface between the circuitlayer 22 of the semiconductor wafer 20B and the circuit layer 22 of thesemiconductor wafer 20A (that is, the directly bonded interface). Sincethe semiconductor substrate 21 of the semiconductor wafer 20B functionsas a support substrate, the fracture 9 is formed so as not to reach thesemiconductor substrate 21 of the semiconductor wafer 20B. Further, thesemiconductor substrate 21 is irradiated with a laser light L2 by usingthe back surface 21 r of the semiconductor substrate 21 of thesemiconductor wafer 20A as an incident surface of the laser light L1, soas to correspond to each functional element 23. Thereby, a getteringregion (first gettering region) 4 is formed in the semiconductorsubstrate 21 for each functional element 23 (first forming step). Eitherof forming the modified region 7 and forming the gettering region 4 maybe performed firstly. Forming the modified region 7 and forming thegettering region 4 may be performed simultaneously.

The modified region 7 and the gettering region 4 may be formed in thesame step by using a laser processing device capable of changing thepulse width, for example, a fiber laser having an oscillation wavelengthof 1099 nm. As an example, the pulse width of the laser light L2 forforming the gettering region 4 is set to be smaller than the pulse widthof the laser light L1 for forming the modified region 7, for example,the pulse width of the laser light L1 for forming the modified region 7is set to 700 ns, and the pulse width of the laser light L2 for formingthe gettering region 4 is set to 20 ns. Thus, it is possible to form thegettering region 4 which has a size smaller than that of the modifiedregion 7 and in which fractures are generated less than fractures in themodified region 7.

A specific example of an irradiation condition of the laser light L1 forforming the modified region 7 is as follows. With the irradiationcondition, it is possible to suppress an occurrence of a situation inwhich the circuit layer 22 is damaged by a leakage light of the laserlight L1. So long as a desired fracture 9 can be generated from themodified region 7, the number of lines of the modified regions 7 formedalong each of the lines to cut 5 a and 5 b (number of lines of themodified regions 7 arranged in the third direction D3) may be plural orone.

Wavelength: to 1170 nm

Pulse width: 350 ns or more

Pulse energy: 10 μJ or more

Pulse pitch: 6.5 to 15 μm

Distance between the modified region 7 on the circuit layer 22 side andthe front surface 21 f: 40 μm or more

Number of times of scanning of each of the lines to cut 5 a and 5 b withthe laser light L1: once in bifocal branch

A specific example of an irradiation condition of the laser light L2 forforming the gettering region 4 is as follows. Thus, the gettering region4 having a width of about 1 to 4 μm in an incident direction of thelaser light L2 can be formed.

Wavelength: 1064 to 1170 nm

Pulse width: 1 to 60 ns

Pulse energy: 0.1 to 0.5 μJ

Then, as illustrated in (b) of FIG. 12, the semiconductor substrate 21of the semiconductor wafer 20A on which the modified region 7 and thegettering region 4 are formed is ground (first grinding step). At thistime, the modified region 7 is removed, and the fracture 9 is exposed tothe back surface 21 r of the semiconductor substrate 21 of thesemiconductor wafer 20A. Further, a portion of the gettering region 4 isremoved. Here, the semiconductor substrate 21 is ground from the backsurface 21 r side, and thus the semiconductor substrate 21 (that is, thesemiconductor wafer 20A) is thinned. Here, for example, thesemiconductor substrate 21 is ground such that the thickness of thesemiconductor substrate 21 is about from 3 μm to 13 μm (as an example,the thickness is substantially equal to the thickness of the circuitlayer 22). Thus, the total thickness of the semiconductor wafer 20A isset to, for example, about 6 μm to 26 μm. The new back surface 21 rformed by the grinding is flat enough to allow direct bonding (as anexample, the back surface is mirrored).

Then, as illustrated in (a) of FIG. 13, a new semiconductor wafer(second wafer) 20A is prepared, and the circuit layer 22 of the newsemiconductor wafer 20A is directly bonded to the semiconductorsubstrate 21 of the ground semiconductor wafer 20A (bonding step). Atthis time, the functional elements 23 of the ground semiconductor wafer20A correspond to the functional elements 23 of the new semiconductorwafer 20A in the third direction D3, respectively.

Then, as illustrated in (b) of FIG. 13, the semiconductor substrate 21is irradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the new semiconductor wafer 20A as an incident surface of the laserlight L1, and thus a modified region (second modified region) 7 isformed along each of the lines to cut 5 a and 5 b in the semiconductorsubstrate 21. In addition, a fracture (second fracture) 9 extending fromthe modified region 7 toward the circuit layer 22 of the newsemiconductor wafer 20A is formed in the semiconductor substrate 21(second forming step). Here, the fracture 9 is formed to reach at leastthe interface between the semiconductor substrate 21 of the groundsemiconductor wafer 20A and the circuit layer 22 of the newsemiconductor wafer 20A (that is, the directly bonded interface).Further, the semiconductor substrate 21 is irradiated with a laser lightL2 by using the back surface 21 r of the semiconductor substrate 21 ofthe new semiconductor wafer 20A as an incident surface of the laserlight L1, so as to correspond to each functional element 23. Thereby, agettering region (second gettering region) 4 is formed in thesemiconductor substrate 21 for each functional element 23 (secondforming step). The irradiation condition for each of the laser light L1and the laser light L2 is as described above. Either of forming themodified region 7 and forming the gettering region 4 may be performedfirstly. Forming the modified region 7 and forming the gettering region4 may be performed simultaneously.

Then, as illustrated in (a) of FIG. 14, the semiconductor substrate 21of the semiconductor wafer 20A on which the modified region 7 and thegettering region 4 are formed is ground (second grinding step). At thistime, the modified region 7 is removed, and the fracture 9 is exposed tothe back surface 21 r of the semiconductor substrate 21 of thesemiconductor wafer 20A. Further, a portion of the gettering region 4 isremoved. Here, the semiconductor substrate 21 is ground from the backsurface 21 r side, and thus the semiconductor substrate 21 (that is, thesemiconductor wafer 20A) is thinned. Here, for example, thesemiconductor substrate 21 is ground such that the thickness of thesemiconductor substrate 21 is about from 3 μm to 13 μm (as an example,the thickness is substantially equal to the thickness of the circuitlayer 22). Thus, the total thickness of the semiconductor wafer 20A isset to, for example, about 6 μm to 26 μm. The new back surface 21 rformed by the grinding is flat enough to allow direct bonding (as anexample, the back surface is mirrored).

Then, as illustrated in (b) of FIG. 14, the laminated body 10 isconfigured by repeating a flow of directly bonding the new semiconductorwafer 20A to the ground semiconductor wafer 20A, forming the modifiedregion 7 and the gettering region 4 in the new semiconductor wafer 20A,and grinding the new semiconductor wafer 20A. Thus, for example, onesemiconductor wafer 20B including the functional element 23 as thedriver IC and a plurality (here, nine) of semiconductor wafers 20Aincluding the functional element 23 as the semiconductor memory arelaminated, and thereby a laminated body 10 configured with a plurality(here, ten) of semiconductor wafers 20 is obtained.

In (b) of FIG. 14, the laminated body 10 obtained as described above isheld by a holder H in an inverted state. That is, here, it is desiredthat the other end 10 b of the laminated body 10 is directed toward theholder H, and the semiconductor wafer 20A including the one end 10 a ismost on the opposite side of the holder H. Thus, the back surface 21 rof the semiconductor substrate 21 is exposed. In descriptions of thesubsequent steps, descriptions of the laminated structure of thelaminated body 10 will be omitted, and the active region 11 and thecutting region 12 will be representatively illustrated.

Then, as illustrated in FIG. 15, the semiconductor substrate 21 isirradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20B as an incident surface of the laser lightL1, and thus a modified region 7 is formed along each of the lines tocut 5 a and 5 b in the semiconductor substrate 21. In addition, afracture 9 extending from the modified region 7 toward the circuit layer22 of the semiconductor wafer 20B is formed in the semiconductorsubstrate 21. Here, the fracture 9 is formed to reach at least theinterface between the circuit layer 22 of the semiconductor wafer 20Aand the circuit layer 22 of the semiconductor wafer 20B (that is, thedirectly bonded interface). Thus, the fracture 9 continues to the backsurface 21 r of the semiconductor substrate 21 of the semiconductorwafer 20A, which is located closest to the holder H along each of thelines to cut 5 a and 5 b. Further, the semiconductor substrate 21 isirradiated with a laser light L2 by using the back surface 21 r of thesemiconductor substrate 21 of the semiconductor wafer 20B as an incidentsurface of the laser light L1, so as to correspond to each functionalelement 23 (that is, each functional element 23 as the driver IC).Thereby, the gettering region 4 is formed in the semiconductor substrate21 for each functional element 23. The irradiation condition for each ofthe laser light L1 and the laser light L2 is as described above. Eitherof forming the modified region 7 and forming the gettering region 4 maybe performed firstly. Forming the modified region 7 and forming thegettering region 4 may be performed simultaneously.

Then, as illustrated in (a) of FIG. 16, the semiconductor substrate 21of the semiconductor wafer 20B on which the modified region 7 and thegettering region 4 are formed is ground. At this time, the modifiedregion 7 is removed, and the fracture 9 is exposed to the back surface21 r of the semiconductor substrate 21 of the semiconductor wafer 20B.The gettering region 4 remains. Here, the semiconductor substrate 21 isground from the back surface 21 r side, and thus the semiconductorsubstrate 21 (that is, the semiconductor wafer 20B) is thinned. Here,for example, the semiconductor substrate 21 of the semiconductor wafer20B is ground such that the thickness of the semiconductor substrate 21is about 200 μm. The reason that the semiconductor substrate 21 of thesemiconductor wafer 20B is left to be thicker than that in the othersemiconductor substrates 21 is that the semiconductor substrate 21 ofthe semiconductor wafer 20B serves as the support substrate in thelaminated element 15.

Then, as illustrated in (b) of FIG. 16, the laminated body 10 is in astate of being supported by an expandable support member S such as anexpanded tape. At this time, the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B is disposed on the supportmember S side. In this state, if the support member S is expanded, theplurality of laminated elements 15 obtained by cutting the laminatedbody 10 along each of the lines to cut 5 a and 5 b are separated fromeach other, and each laminated element 15 is picked up (pick-up step).

As described above, in the laminated element manufacturing methodaccording to the first embodiment, it is possible to obtain thelaminated body 10 in which the plurality of semiconductor wafers 20A arelaminated in a state where each semiconductor substrate 21 is thinned,by repeating a flow of grinding the semiconductor substrate 21 of thesemiconductor wafer 20A, directly bonding the circuit layer 22 of thenew semiconductor wafer 20A to the semiconductor substrate 21 of thesemiconductor wafer 20A, and grinding the semiconductor substrate 21 ofthe new semiconductor wafer 20A. In addition, since the modified region7 is formed in each semiconductor substrate 21 before the semiconductorsubstrate 21 is ground, it is possible to obtain a laminated body 10 inwhich the modified region 7 is formed in each semiconductor substrate21. Here, if blade dicing is used for cutting the laminated body 10 asdescribed above, the yield is significantly reduced by chipping at abonding interface of the semiconductor wafer 20A. On the contrary, inthe laminated element manufacturing method according to the firstembodiment, since the fracture 9 extends from the modified region 7formed in each semiconductor substrate 21, it is possible to cut thelaminated body 10 while suppressing an occurrence of chipping at thebonding interface of the semiconductor wafer 20A. Thus, according to thelaminated element manufacturing method according to the firstembodiment, it is possible to achieve both thinning of the laminatedelement 15 and improvement of the yield.

Further, in the laminated element manufacturing method according to thefirst embodiment, when the modified region 7 is formed in eachsemiconductor substrate 21, the fracture 9 extending from the modifiedregion 7 toward the circuit layer 22 is formed. In particular, in thelaminated element manufacturing method according to the firstembodiment, when the modified region 7 is formed in each semiconductorsubstrate 21, the fracture 9 is formed to reach the interface betweenthe semiconductor substrate 21 and the circuit layer 22 which aredirectly bonded to each other. Thus, it is possible to more easily cutthe laminated body 10 along each of the lines to cut 5 a and 5 b withhigher accuracy.

Further, in the laminated element manufacturing method according to thefirst embodiment, when each semiconductor substrate 21 is ground, themodified region 7 is removed, and the fracture 9 is exposed to the backsurface 21 r of the semiconductor substrate 21. Accordingly, since themodified region 7 does not remain on the cut surface of the manufacturedlaminated element 15, it is possible to suppress degradation of flexuralstrength of the laminated element 15.

Further, in the laminated element manufacturing method according to thefirst embodiment, the plurality of laminated elements 15 obtained bycutting the laminated body 10 along each of the lines to cut 5 a and 5 bare picked up. Thus, it is possible to obtain the laminated element 15with high efficiency.

Further, in the laminated element manufacturing method according to thefirst embodiment, since the gettering region 4 is formed in eachsemiconductor substrate 21 before each semiconductor substrate 21 isground, and the portion of the gettering region 4 is removed when eachsemiconductor substrate 21 is ground, it is possible to form anappropriate gettering region 4 in the thinned semiconductor substrate21. Thus, according to the laminated element manufacturing methodaccording to the first embodiment, it is possible to achieve boththinning of the laminated element 15 and forming the appropriategettering region 4.

Further, in the laminated element manufacturing method according to thefirst embodiment, the pulse width of the laser light L2 for forming thegettering region 4 is smaller than the pulse width of the laser light L1for forming the modified region 7. Thus, it is possible to suppressextension of the fracture from the gettering region 4 and to accelerateextension of the fracture 9 from the modified region 7.

Second Embodiment

An example of a laminated element manufacturing method according to asecond embodiment will be described. Here, firstly, as illustrated in(a) of FIG. 17, a support substrate 60 is prepared. As the supportsubstrate 60, any substrate such as a glass substrate and asemiconductor substrate is provided. Then, as illustrated in (b) of FIG.17, a semiconductor wafer (first wafer) 20A is prepared. Then, a circuitlayer 22 of the semiconductor wafer 20A is bonded to a front surface 60s of the support substrate 60. For example, resin bonding may be usedfor this bonding.

Then, as illustrated in (a) of FIG. 18, the semiconductor substrate 21is irradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20A as an incident surface of the laser lightL1, and thus a modified region (first modified region) 7 is formed alongeach of the lines to cut 5 a and 5 b in the semiconductor substrate 21.In addition, a fracture (first fracture) 9 extending from the modifiedregion 7 toward the circuit layer 22 of the semiconductor wafer 20A isformed in the semiconductor substrate 21 (first forming step). Here, thefracture 9 is formed so as to reach at least the interface between thesupport substrate 60 and the circuit layer 22 of the semiconductor wafer20A (that is, the bonded interface) and not to reach the supportsubstrate 60. Further, the semiconductor substrate 21 is irradiated witha laser light L2 by using the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20A as an incident surface ofthe laser light L1, so as to correspond to each functional element 23.Thereby, a gettering region (first gettering region) 4 is formed in thesemiconductor substrate 21 for each functional element 23 (first formingstep). The irradiation condition for each of the laser light L1 and thelaser light L2 is as described in the first embodiment. Either offorming the modified region 7 and forming the gettering region 4 may beperformed firstly. Forming the modified region 7 and forming thegettering region 4 may be performed simultaneously.

Then, as illustrated in (b) of FIG. 18, the semiconductor substrate 21of the semiconductor wafer 20A on which the modified region 7 and thegettering region 4 are formed is ground (first grinding step). At thistime, the modified region 7 is removed, and the fracture 9 is exposed tothe back surface 21 r of the semiconductor substrate 21 of thesemiconductor wafer 20A. Further, a portion of the gettering region 4 isremoved. Here, the semiconductor substrate 21 is ground from the backsurface 21 r side, and thus the semiconductor substrate 21 (that is, thesemiconductor wafer 20A) is thinned. Here, for example, thesemiconductor substrate 21 is ground such that the thickness of thesemiconductor substrate 21 is about from 3 μm to 13 μm (as an example,the thickness is substantially equal to the thickness of the circuitlayer 22). Thus, the total thickness of the semiconductor wafer 20A isset to, for example, about 6 μm to 26 μm. The new back surface 21 rformed by the grinding is flat enough to allow direct bonding (as anexample, the back surface is mirrored).

Then, as illustrated in (a) of FIG. 19, a new semiconductor wafer(second wafer) 20A is prepared, and the circuit layer 22 of the newsemiconductor wafer 20A is directly bonded to the semiconductorsubstrate 21 of the ground semiconductor wafer 20A (bonding step). Atthis time, the functional elements 23 of the ground semiconductor wafer20A correspond to the functional elements 23 of the new semiconductorwafer 20A in the third direction D3, respectively.

Then, as illustrated in (b) of FIG. 19, the semiconductor substrate 21is irradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the new semiconductor wafer 20A as an incident surface of the laserlight L1, and thus a modified region (second modified region) 7 isformed along each of the lines to cut 5 a and 5 b in the semiconductorsubstrate 21. In addition, a fracture (second fracture) 9 extending fromthe modified region 7 toward the circuit layer 22 of the newsemiconductor wafer 20A is formed in the semiconductor substrate 21(second forming step). Here, the fracture 9 is formed to reach at leastthe interface between the semiconductor substrate 21 of the groundsemiconductor wafer 20A and the circuit layer 22 of the newsemiconductor wafer 20A (that is, the directly bonded interface).Further, the semiconductor substrate 21 is irradiated with a laser lightL2 by using the back surface 21 r of the semiconductor substrate 21 ofthe new semiconductor wafer 20A as an incident surface of the laserlight L1, so as to correspond to each functional element 23. Thereby, agettering region (second gettering region) 4 is formed in thesemiconductor substrate 21 for each functional element 23 (secondforming step). The irradiation condition for each of the laser light L1and the laser light L2 is as described in the first embodiment. Eitherof forming the modified region 7 and forming the gettering region 4 maybe performed firstly. Forming the modified region 7 and forming thegettering region 4 may be performed simultaneously.

Then, as illustrated in (a) of FIG. 20, the semiconductor substrate 21of the semiconductor wafer 20A on which the modified region 7 and thegettering region 4 are formed is ground (second grinding step). At thistime, the modified region 7 is removed, and the fracture 9 is exposed tothe back surface 21 r of the semiconductor substrate 21 of thesemiconductor wafer 20A. Further, a portion of the gettering region 4 isremoved. Here, the semiconductor substrate 21 is ground from the backsurface 21 r side, and thus the semiconductor substrate 21 (that is, thesemiconductor wafer 20A) is thinned. Here, for example, thesemiconductor substrate 21 is ground such that the thickness of thesemiconductor substrate 21 is about from 3 μm to 13 μm (as an example,the thickness is substantially equal to the thickness of the circuitlayer 22). Thus, the total thickness of the semiconductor wafer 20A isset to, for example, about 6 μm to 26 μm. The new back surface 21 rformed by the grinding is flat enough to allow direct bonding (as anexample, the back surface is mirrored).

Then, as illustrated in (b) of FIG. 20, (a) of FIG. 21, and (b) of FIG.21, a laminated body including a plurality (here, nine) of semiconductorwafers 20A laminated on the support substrate 60 is configured byrepeating a flow of directly bonding the new semiconductor wafer 20A tothe ground semiconductor wafer 20A, forming the modified region 7 andthe gettering region 4 in the new semiconductor wafer 20A, and grindingthe new semiconductor wafer 20A.

Then, as illustrated in FIG. 22, a semiconductor wafer 20B is prepared,and a circuit layer 22 of the semiconductor wafer 20B is directly bondedto the semiconductor substrate 21 of the ground semiconductor wafer 20A.At this time, the functional elements 23 of the ground semiconductorwafer 20A correspond to the functional elements 23 of the semiconductorwafer 20B in the third direction D3, respectively. Thus, a laminatedbody 10 is obtained. Here, in the laminated body 10, the semiconductorsubstrates 21 and the circuit layers 22 are alternately laminated overthe entirety of the laminated body 10.

Then, as illustrated in FIG. 15, the semiconductor substrate 21 isirradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20B as an incident surface of the laser lightL1, and thus a modified region 7 is formed along each of the lines tocut 5 a and 5 b in the semiconductor substrate 21. In addition, afracture 9 extending from the modified region 7 toward the circuit layer22 of the semiconductor wafer 20B is formed in the semiconductorsubstrate 21. Here, the fracture 9 is formed to reach at least theinterface between the semiconductor substrate 21 of the semiconductorwafer 20A and the circuit layer 22 of the semiconductor wafer 20B (thatis, the directly bonded interface). Thus, the fracture 9 continues tothe front surface of the circuit layer 22 of the semiconductor wafer20A, which is located closest to the holder H (that is, a side to whichthe support substrate 60 is bonded) along each of the lines to cut 5 aand 5 b. Further, the semiconductor substrate 21 is irradiated with alaser light L2 by using the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B as an incident surface ofthe laser light L1, so as to correspond to each functional element 23(that is, each functional element 23 as the driver IC). Thereby, thegettering region 4 is formed in the semiconductor substrate 21 for eachfunctional element 23. The irradiation condition for each of the laserlight L1 and the laser light L2 is as described in the first embodiment.Either of forming the modified region 7 and forming the gettering region4 may be performed firstly. Forming the modified region 7 and formingthe gettering region 4 may be performed simultaneously.

Then, as illustrated in (a) of FIG. 16, the semiconductor substrate 21of the semiconductor wafer 20B on which the modified region 7 and thegettering region 4 are formed is ground. At this time, the modifiedregion 7 is removed, and the fracture 9 is exposed to the back surface21 r of the semiconductor substrate 21 of the semiconductor wafer 20B.The gettering region 4 remains. Here, the semiconductor substrate 21 isground from the back surface 21 r side, and thus the semiconductorsubstrate 21 (that is, the semiconductor wafer 20B) is thinned. Here,for example, the semiconductor substrate 21 of the semiconductor wafer20B is ground such that the thickness of the semiconductor substrate 21is about 200 μm. The reason that the semiconductor substrate 21 of thesemiconductor wafer 20B is left to be thicker than that in the othersemiconductor substrates 21 is that the semiconductor substrate 21 ofthe semiconductor wafer 20B serves as the support substrate in thelaminated element 15.

Then, as illustrated in (b) of FIG. 16, the laminated body 10 is in astate of being supported by an expandable support member S such as anexpanded tape. At this time, the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B is disposed on the supportmember S side. In this state, if the support member S is expanded, theplurality of laminated elements 15 obtained by cutting the laminatedbody 10 along each of the lines to cut 5 a and 5 b are separated fromeach other, and each laminated element 15 is picked up (pick-up step).

With the above laminated element manufacturing method according to thesecond embodiment, effects similar to those in the first embodiment areexhibited.

Third Embodiment

An example of a laminated element manufacturing method according to athird embodiment will be described. Firstly, as illustrated in (a) ofFIG. 23, a semiconductor wafer 20B is prepared. Then, as illustrated in(b) of FIG. 23, a semiconductor wafer (first wafer) 20A is prepared.Then, the circuit layer 22 of the semiconductor wafer 20A is directlybonded to the circuit layer 22 of the semiconductor wafer 20B. At thistime, the functional elements 23 of the semiconductor wafer 20Bcorrespond to the functional elements 23 of the semiconductor wafer 20Ain the third direction D3 intersecting with the front surface 21 f andthe back surface 21 r, respectively.

Then, as illustrated in (a) of FIG. 24, the semiconductor substrate 21of the semiconductor wafer 20A is ground (first grinding step). Here,the semiconductor substrate 21 is ground from the back surface 21 rside, and thus the semiconductor substrate 21 (that is, thesemiconductor wafer 20A) is thinned. Here, for example, thesemiconductor substrate 21 is ground such that the thickness of thesemiconductor substrate 21 is about from 3 μm to 13 μm (as an example,the thickness is substantially equal to the thickness of the circuitlayer 22). Thus, the total thickness of the semiconductor wafer 20A isset to, for example, about 6 μm to 26 μm. The new back surface 21 rformed by the grinding is flat enough to allow direct bonding (as anexample, the back surface is mirrored).

Then, as illustrated in (b) of FIG. 24, a new semiconductor wafer(second wafer) 20A is prepared, and the circuit layer 22 of the newsemiconductor wafer 20A is directly bonded to the semiconductorsubstrate 21 of the ground semiconductor wafer 20A (bonding step). Atthis time, the functional elements 23 of the ground semiconductor wafer20A correspond to the functional elements 23 of the new semiconductorwafer 20A in the third direction D3, respectively.

Then, as illustrated in (a) of FIG. 25, the semiconductor substrate 21is irradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20A as an incident surface of the laser lightL1, and thus a modified region 7 is formed along each of the lines tocut 5 a and 5 b in the semiconductor substrate 21. In addition, afracture 9 extending from the modified region 7 toward the circuit layer22 of the semiconductor wafer 20A is formed in the semiconductorsubstrate 21 (forming step). Here, the fracture 9 is formed to reach atleast the interface between the circuit layer 22 of the groundsemiconductor wafer 20A and the semiconductor substrate 21 of the groundsemiconductor wafer 20A. Since the semiconductor substrate 21 of thesemiconductor wafer 20B functions as a support substrate, the fracture 9is formed so as not to reach the semiconductor substrate 21 of thesemiconductor wafer 20B. The irradiation condition for the laser lightL1 is as described in the first embodiment.

Then, as illustrated in (b) of FIG. 25, the semiconductor substrate 21of the semiconductor wafer 20A on which the modified region 7 is formedis ground (second grinding step). At this time, the modified region 7 isremoved, and the fracture 9 is exposed to the back surface 21 r of thesemiconductor substrate 21 of the semiconductor wafer 20A. Here, thesemiconductor substrate 21 is ground from the back surface 21 r side,and thus the semiconductor substrate 21 (that is, the semiconductorwafer 20A) is thinned. Here, for example, the semiconductor substrate 21is ground such that the thickness of the semiconductor substrate 21 isabout from 3 μm to 13 μm (as an example, the thickness is substantiallyequal to the thickness of the circuit layer 22). Thus, the totalthickness of the semiconductor wafer 20A is set to, for example, about 6μm to 26 μm. The new back surface 21 r formed by the grinding is flatenough to allow direct bonding (as an example, the back surface ismirrored).

Then, as illustrated in FIG. 26, the laminated body 10 is configured byrepeating a flow of directly bonding the new semiconductor wafer 20A tothe ground semiconductor wafer 20A, forming the modified region 7 in thenew semiconductor wafer 20A, and grinding the new semiconductor wafer20A. Forming the modified region 7 in the new semiconductor wafer 20A isperformed every time the steps from the direct bonding of the newsemiconductor wafer 20A to the ground semiconductor wafer 20A togrinding of the new semiconductor wafer 20A are performed not once butplural times. Thus, for example, one semiconductor wafer 20B includingthe functional element 23 as the driver IC and a plurality (here, nine)of semiconductor wafers 20A including the functional element 23 as thesemiconductor memory are laminated, and thereby a laminated body 10configured with a plurality (here, ten) of semiconductor wafers 20 isobtained.

Then, as illustrated in FIG. 15, the semiconductor substrate 21 isirradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20B as an incident surface of the laser lightL1, and thus a modified region 7 is formed along each of the lines tocut 5 a and 5 b in the semiconductor substrate 21. In addition, afracture 9 extending from the modified region 7 toward the circuit layer22 of the semiconductor wafer 20B is formed in the semiconductorsubstrate 21. Here, the fracture 9 is formed to reach at least theinterface between the circuit layer 22 of the semiconductor wafer 20Aand the circuit layer 22 of the semiconductor wafer 20B (that is, thedirectly bonded interface).

Although the irradiation condition for the laser light L1 is asdescribed in the first embodiment, a specific example of the irradiationcondition for the laser light L1 may be as follows in a case where thegettering region 4 is not formed in the same step in which the modifiedregion 7 is formed. So long as a desired fracture 9 can be generatedfrom the modified region 7, the number of lines of the modified regions7 formed along each of the lines to cut 5 a and 5 b (number of lines ofthe modified regions 7 arranged in the third direction D3) may be pluralor one.

Wavelength: 1170 to 1800 nm

Pulse width: 350 ns or more

Pulse energy: 25 μJ or more

Pulse pitch: 6.5 to 45 μm

Distance between the modified region 7 on the circuit layer 22 side andthe front surface 21 f: 200 m or more

Number of times of scanning of each of the lines to cut 5 a and 5 b withthe laser light L1: two times

Then, as illustrated in (a) of FIG. 16, the semiconductor substrate 21of the semiconductor wafer 20B on which the modified region 7 is formedis ground. At this time, the modified region 7 is removed, and thefracture 9 is exposed to the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B. Here, the semiconductorsubstrate 21 is ground from the back surface 21 r side, and thus thesemiconductor substrate 21 (that is, the semiconductor wafer 20B) isthinned. Here, for example, the semiconductor substrate 21 of thesemiconductor wafer 20B is ground such that the thickness of thesemiconductor substrate 21 is about 200 sm. The reason that thesemiconductor substrate 21 of the semiconductor wafer 20B is left to bethicker than that in the other semiconductor substrates 21 is that thesemiconductor substrate 21 of the semiconductor wafer 20B serves as thesupport substrate in the laminated element 15.

Then, as illustrated in (b) of FIG. 16, the laminated body 10 is in astate of being supported by an expandable support member S such as anexpanded tape. At this time, the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B is disposed on the supportmember S side. In this state, if the support member S is expanded, theplurality of laminated elements 15 obtained by cutting the laminatedbody 10 along each of the lines to cut 5 a and 5 b are separated fromeach other, and each laminated element 15 is picked up (pick-up step).

As described above, in the laminated element manufacturing methodaccording to the third embodiment, it is possible to obtain thelaminated body 10 in which the plurality of semiconductor wafers 20A arelaminated in a state where each semiconductor substrate 21 is thinned,by repeating a flow of grinding the semiconductor substrate 21 of thesemiconductor wafer 20A, directly bonding the circuit layer 22 of thenew semiconductor wafer 20A to the semiconductor substrate 21 of thesemiconductor wafer 20A, and grinding the semiconductor substrate 21 ofthe new semiconductor wafer 20A. In addition, since the modified region7 is formed in one semiconductor substrate 21 among a plurality ofsemiconductor substrates 21 before the semiconductor substrates 21 areground, it is possible to obtain a laminated body 10 in which themodified region 7 is formed in at least one semiconductor substrate 21.Here, if blade dicing is used for cutting the laminated body 10 asdescribed above, the yield is significantly reduced by chipping at abonding interface of the semiconductor wafer 20A. On the contrary, inthe laminated element manufacturing method according to the thirdembodiment, since the fracture 9 extends from the modified region 7formed in at least one semiconductor substrate 21, it is possible to cutthe laminated body 10 while suppressing an occurrence of chipping at thebonding interface of the semiconductor wafer 20A. Thus, according to thelaminated element manufacturing method according to the thirdembodiment, it is possible to achieve both thinning of the laminatedelement 15 and improvement of the yield.

Further, in the laminated element manufacturing method according to thethird embodiment, when the modified region 7 is formed in eachsemiconductor substrate 21, the fracture 9 extending from the modifiedregion 7 toward the circuit layer 22 is formed. In particular, in themanufacturing method of the laminated element 15 according to the firstembodiment, when the modified region 7 is formed in each semiconductorsubstrate 21, the fracture 9 is formed to reach the interface betweenthe semiconductor substrate 21 and the circuit layer 22 which aredirectly bonded to each other. Thus, it is possible to more easily cutthe laminated body 10 along each of the lines to cut 5 a and 5 b withhigher accuracy.

Further, in the laminated element manufacturing method according to thethird embodiment, when each semiconductor substrate 21 is ground, themodified region 7 is removed, and the fracture 9 is exposed to the backsurface 21 r of the semiconductor substrate 21. Accordingly, since themodified region 7 does not remain on the cut surface of the manufacturedlaminated element 15, it is possible to suppress degradation of flexuralstrength of the laminated element 15.

Further, in the laminated element manufacturing method according to thethird embodiment, the plurality of laminated elements 15 obtained bycutting the laminated body 10 along each of the lines to cut 5 a and 5 bare picked up. Thus, it is possible to obtain the laminated element 15with high efficiency.

Fourth Embodiment

An example of a laminated element manufacturing method according to afourth embodiment will be described. Here, firstly, as illustrated in(a) of FIG. 27, a support substrate 60 is prepared. Then, as illustratedin (b) of FIG. 27, a semiconductor wafer (first wafer) 20A is prepared.Then, a circuit layer 22 of the semiconductor wafer 20A is bonded to afront surface 60 s of the support substrate 60.

Then, as illustrated in (a) of FIG. 28, the semiconductor substrate 21of the semiconductor wafer 20A is ground (first grinding step). Here,the semiconductor substrate 21 is ground from the back surface 21 rside, and thus the semiconductor substrate 21 (that is, thesemiconductor wafer 20A) is thinned. Here, for example, thesemiconductor substrate 21 is ground such that the thickness of thesemiconductor substrate 21 is about from 3 μm to 13 μm (as an example,the thickness is substantially equal to the thickness of the circuitlayer 22). Thus, the total thickness of the semiconductor wafer 20A isset to, for example, about 6 μm to 26 μm. The new back surface 21 rformed by the grinding is flat enough to allow direct bonding (as anexample, the back surface is mirrored).

Then, as illustrated in (b) of FIG. 28, a new semiconductor wafer(second wafer) 20A is prepared, and the circuit layer 22 of the newsemiconductor wafer 20A is directly bonded to the semiconductorsubstrate 21 of the ground semiconductor wafer 20A (bonding step). Atthis time, the functional elements 23 of the ground semiconductor wafer20A correspond to the functional elements 23 of the new semiconductorwafer 20A in the third direction D3, respectively.

Then, as illustrated in (a) of FIG. 29, the semiconductor substrate 21is irradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20A as an incident surface of the laser lightL1, and thus a modified region 7 is formed along each of the lines tocut 5 a and 5 b in the semiconductor substrate 21. In addition, afracture 9 extending from the modified region 7 toward the circuit layer22 of the semiconductor wafer 20A is formed in the semiconductorsubstrate 21 (forming step). Here, the fracture 9 is formed so as toreach at least the interface between the circuit layer 22 of the groundsemiconductor wafer 20A and the semiconductor substrate 21 of the groundsemiconductor wafer 20A and so as not to reach the support substrate 60.The irradiation condition for the laser light L1 is as described in thefirst embodiment.

Then, as illustrated in (b) of FIG. 29, the semiconductor substrate 21of the semiconductor wafer 20A on which the modified region 7 is formedis ground (second grinding step). At this time, the modified region 7 isremoved, and the fracture 9 is exposed to the back surface 21 r of thesemiconductor substrate 21 of the semiconductor wafer 20A. Here, thesemiconductor substrate 21 is ground from the back surface 21 r side,and thus the semiconductor substrate 21 (that is, the semiconductorwafer 20A) is thinned. Here, for example, the semiconductor substrate 21is ground such that the thickness of the semiconductor substrate 21 isabout from 3 μm to 13 μm (as an example, the thickness is substantiallyequal to the thickness of the circuit layer 22). Thus, the totalthickness of the semiconductor wafer 20A is set to, for example, about 6μm to 26 μm. The new back surface 21 r formed by the grinding is flatenough to allow direct bonding (as an example, the back surface ismirrored).

Then, as illustrated in (a) of FIG. 30 and (b) of FIG. 30, a laminatedbody including a plurality (here, nine) of semiconductor wafers 20Alaminated on the support substrate 60 is configured by repeating a flowof directly bonding the new semiconductor wafer 20A to the groundsemiconductor wafer 20A, forming the modified region 7 in the newsemiconductor wafer 20A, and grinding the new semiconductor wafer 20A.Forming the modified region 7 in the new semiconductor wafer 20A isperformed every time the steps from the direct bonding of the newsemiconductor wafer 20A to the ground semiconductor wafer 20A togrinding of the new semiconductor wafer 20A are performed not once butplural times.

Then, as illustrated in FIG. 31, a semiconductor wafer 20B is prepared,and a circuit layer 22 of the semiconductor wafer 20B is directly bondedto the semiconductor substrate 21 of the ground semiconductor wafer 20A.At this time, the functional elements 23 of the ground semiconductorwafer 20A correspond to the functional elements 23 of the semiconductorwafer 20B in the third direction D3, respectively. Thus, a laminatedbody 10 is obtained. Here, in the laminated body 10, the semiconductorsubstrates 21 and the circuit layers 22 are alternately laminated overthe entirety of the laminated body 10.

Then, as illustrated in FIG. 15, the semiconductor substrate 21 isirradiated with the laser light L1 along each of the lines to cut 5 aand 5 b by using the back surface 21 r of the semiconductor substrate 21of the semiconductor wafer 20B as an incident surface of the laser lightL1, and thus a modified region 7 is formed along each of the lines tocut 5 a and 5 b in the semiconductor substrate 21. In addition, afracture 9 extending from the modified region 7 toward the circuit layer22 of the semiconductor wafer 20B is formed in the semiconductorsubstrate 21. Here, the fracture 9 is formed to reach at least theinterface between the semiconductor substrate 21 of the semiconductorwafer 20A and the circuit layer 22 of the semiconductor wafer 20B (thatis, the directly bonded interface). The irradiation condition for thelaser light L1 is as described in the first embodiment and the thirdembodiment.

Then, as illustrated in (a) of FIG. 16, the semiconductor substrate 21of the semiconductor wafer 20B on which the modified region 7 is formedis ground. At this time, the modified region 7 is removed, and thefracture 9 is exposed to the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B. Here, the semiconductorsubstrate 21 is ground from the back surface 21 r side, and thus thesemiconductor substrate 21 (that is, the semiconductor wafer 20B) isthinned. Here, for example, the semiconductor substrate 21 of thesemiconductor wafer 20B is ground such that the thickness of thesemiconductor substrate 21 is about 200 μm. The reason that thesemiconductor substrate 21 of the semiconductor wafer 20B is left to bethicker than that in the other semiconductor substrates 21 is that thesemiconductor substrate 21 of the semiconductor wafer 20B serves as thesupport substrate in the laminated element 15.

Then, as illustrated in (b) of FIG. 16, the laminated body 10 is in astate of being supported by an expandable support member S such as anexpanded tape. At this time, the back surface 21 r of the semiconductorsubstrate 21 of the semiconductor wafer 20B is disposed on the supportmember S side. In this state, if the support member S is expanded, theplurality of laminated elements 15 obtained by cutting the laminatedbody 10 along each of the lines to cut 5 a and 5 b are separated fromeach other, and each laminated element 15 is picked up (pick-up step).

With the above laminated element manufacturing method according to thefourth embodiment, effects similar to those in the third embodiment areexhibited.

Modification Examples

The above-described embodiments are provided for describing oneembodiment of the laminated element manufacturing method according tothe present disclosure. Thus, the laminated element manufacturing methodaccording to the present disclosure is not limited to theabove-described embodiments, and any modification may be made in a rangewithout changing the gist of the claims.

For example, the fracture 9 extending from the modified region 7 is notconnected to the formed fracture 9 at the time when the modified region7 is formed. Then, when the semiconductor substrate 21 is ground, thefracture 9 extending from the modified region 7 may be connected to theformed fracture 9. The fracture 9 along each of the lines to cut 5 a and5 b is not continuous in the third direction D3 at the time when thelaminated body 10 is configured, and may be separated at leastpartially. Even in this case, it is possible to cut the laminated body10 along each of the lines to cut 5 a and 5 b by expanding the supportmember S.

Each of the lines to cut 5 a and 5 b may be set in a lattice shape so asto pass through the center (center of the width in a case of beingviewed from a direction parallel to the third direction D3) of the metalwiring portions 26 provided in a lattice shape, and the laminated body10 may be cut along each of the lines to cut 5 a and 5 b. In the step ofconfiguring the laminated body 10, the modified region 7 is formed inthe semiconductor substrate 21 along each of the lines to cut 5 a and 5b, and thus it is possible to cut the laminated body 10 along each ofthe lines to cut 5 a and 5 b even in a case where the lines to cut 5 aand 5 b are set so as to pass through the center of the metal wiringportions 26.

In the above-described embodiments, when the two semiconductor wafers 20are bonded to each other, the functional elements 23 are laminated tocorrespond to each other. Corresponding of the functional elements 23 ofone semiconductor wafer 20 to the functional elements 23 of anothersemiconductor wafer 20 means that at least one functional element 23 ofone semiconductor wafer 20 and at least one functional element 23 ofanother semiconductor wafer 20, in one active region 11, have apredetermined positional relationship. Therefore, for example, thecorresponding is not limited to a case where the memory cells 22 a ofthe functional elements 23 correspond to each other one by one, andone-to-many correspondence may be provided. Even in a case where thememory cells 22 a have one-to-one correspondence, the correspondence isnot limited to being arranged in the third direction D3, and a casewhere the positions in the first direction D1 and the second directionD2 are different from each other may be provided.

In the above embodiments, an example in which the circuit layer 22 isdirectly bonded to the semiconductor substrate 21 or another circuitlayer 22 has been described. In a case where the circuit layer 22 isdirectly bonded, flattening processing may be performed on the frontsurface of the circuit layer 22. However, the flattening processing maymean that a flattening film made of resin or the like is formed on thefront surface of the circuit layer 22 in addition to a case whereflattening processing is performed on an insulating film or the like ofthe front surface of the circuit layer 22. That is, the circuit layer 22may be bonded to the semiconductor substrate 21 or the circuit layer 22in a state where another film-like layer is interposed. Thus, thebonding of the circuit layer 22 is not limited to the example of thedirect bonding described above.

The configurations in the embodiment or the modification examplesdescribed above can be randomly applied to the configuration in anotherembodiment or modification examples.

REFERENCE SIGNS LIST

-   -   5 a, 5 b line to cut    -   7 modified region (first modified region, second modified        region)    -   9 fracture (first fracture, second fracture)    -   15 laminated element    -   20A, 20B semiconductor wafer (first wafer, second wafer)    -   21 semiconductor substrate    -   21 f front surface    -   21 r back surface    -   22 circuit layer    -   23 functional element    -   L1, L2 laser light

1: A laminated element manufacturing method comprising: a first formingstep of preparing a first wafer as a semiconductor wafer including asemiconductor substrate having a front surface and a back surface, and acircuit layer including a plurality of functional elementstwo-dimensionally arranged along the front surface, and forming a firstmodified region along a line to cut by irradiating the semiconductorsubstrate of the first wafer with a laser light along the line to cutset to pass between each of the functional elements; a first grindingstep of grinding the semiconductor substrate of the first wafer afterthe first forming step; a bonding step of preparing a second wafer asthe semiconductor wafer and bonding the circuit layer of the secondwafer to the semiconductor substrate of the first wafer such that eachof the functional elements of the first wafer correspond to each offunctional elements of the second wafer, after the first grinding step;a second forming step of forming a second modified region along the lineto cut by irradiating the semiconductor substrate of the second waferwith a laser light along the line to cut, after the bonding step; and asecond grinding step of grinding the semiconductor substrate of thesecond wafer after the second forming step. 2: The laminated elementmanufacturing method according to claim 1, wherein in the first formingstep, a first fracture extending from the first modified region towardthe circuit layer of the first wafer is formed. 3: The laminated elementmanufacturing method according to claim 2, wherein in the first grindingstep, the first modified region is removed, and the first fracture isexposed to the back surface of the semiconductor substrate of the firstwafer. 4: The laminated element manufacturing method according to claim1, wherein in the second forming step, a second fracture extending fromthe second modified region toward the circuit layer of the second waferis formed. 5: The laminated element manufacturing method according toclaim 4, wherein in the second forming step, the second fracture isformed to reach an interface between the semiconductor substrate of thefirst wafer and the circuit layer of the second wafer. 6: The laminatedelement manufacturing method according to claim 4, wherein in the secondgrinding step, the second modified region is removed, and the secondfracture is exposed to the back surface of the semiconductor substrateof the second wafer. 7: A laminated element manufacturing methodcomprising: a first grinding step of preparing a first wafer as asemiconductor wafer including a semiconductor substrate having a frontsurface and a back surface, and a circuit layer including a plurality offunctional elements two-dimensionally arranged along the front surface,and grinding the semiconductor substrate of the first wafer; a bondingstep of preparing a second wafer as the semiconductor wafer and bondingthe circuit layer of the second wafer to the semiconductor substrate ofthe first wafer such that each of the functional elements of the firstwafer correspond to each of the functional elements of the second wafer,after the first grinding step; a forming step of forming a modifiedregion along a line to cut by irradiating a semiconductor substrate ofthe second wafer with a laser light along the line to cut set to passbetween each of the functional elements, after the bonding step; and asecond grinding step of grinding the semiconductor substrate of thesecond wafer after the forming step. 8: The laminated elementmanufacturing method according to claim 7, wherein in the forming step,a fracture extending from the modified region toward the circuit layerof the second wafer is formed. 9: The laminated element manufacturingmethod according to claim 8, wherein in the forming step, the fractureis formed to reach an interface between the circuit layer of the firstwafer and the semiconductor substrate of the first wafer. 10: Thelaminated element manufacturing method according to claim 8, wherein inthe second grinding step, the modified region is removed, and thefracture is exposed to the back surface of the semiconductor substrateof the second wafer. 11: The laminated element manufacturing methodaccording to claim 1, further comprising a pick-up step of picking up aplurality of laminated elements obtained by cutting the first wafer andthe second wafer along the line to cut, after the second grinding step.